Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall

Lijun Tan; Quanbin Zhou; Wenlong Hu; Hong Wang; Ruohe Yao

doi:10.3390/app9173458

Applied Sciences (Aug 2019)

Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall

Lijun Tan,
Quanbin Zhou,
Wenlong Hu,
Hong Wang,
Ruohe Yao

Affiliations

Lijun Tan: Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Quanbin Zhou: Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Wenlong Hu: Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Hong Wang: Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Ruohe Yao: Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China

DOI: https://doi.org/10.3390/app9173458
Journal volume & issue: Vol. 9, no. 17
p. 3458

Abstract

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We demonstrate that the concave-convex circular composite structure sidewall prepared by inductively coupled plasma (ICP) etching is an effective approach to increase the light efficiency without deteriorating the electrical characteristics for micro light-emitting diodes (LEDs). The saturated light output power of the device using the concave-convex circular composite structure sidewalls with a radius of 2 μm is 39.75 mW, an improvement of 7.2% compared with that of the device using flat sidewalls. The enhanced light output characteristics are primarily attributed to the increased photon emitting due by decreasing the total internal reflection without losing the active region area.

Published in Applied Sciences

ISSN: 2076-3417 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Engineering (General). Civil engineering (General); Science: Biology (General); Science: Physics; Science: Chemistry
Website: http://www.mdpi.com/journal/applsci

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