A Resonant Gate Driver for Silicon Carbide MOSFETs

Abstract

In this paper, a resonant gate driver for silicon carbide power MOSFET is proposed. This resonant gate driver contains four N-MOSFETs, a resonant inductor, and a capacitor. The proposed gate driver recycles the energy which is stored in the gate capacitor of the SiC MOSFET. The gate drive losses of the resonant gate driver are reduced greatly, and the switching frequency can reach MHz. The design and the loss analysis are introduced in this paper. Finally, the simulation model and the experimental platform of the resonant gate driver are built to validate the theoretical analysis. Both the simulation and experiment results are provided to verify the feasibility and high performance of the proposed resonant gate driver.

Keywords

• SiC MOSFET
• resonant gate driver
• gate drive losses
• high frequency