Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots

Abstract

Abstract This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the temperature dependences of conductance of the investigated heterostructures. It is revealed that the second peak is broadened and corresponds to a system of closely lying energy levels.

Keywords

• GeSi
• Molecular-beam epitaxy
• Quantum dot
• Admittance spectroscopy
• Energy levels of spatial quantization