Фізика і хімія твердого тіла (Jan 2018)
Chemical Polishig of CdTe and Solid Solution Zn<sub>x</sub>Cd<sub>1-x</sub>Te and Cd<sub>0.2</sub>Hg<sub>0.8</sub>Te by the HNO<sub>3</sub>– НІ – Glycerin Acid Aqueous Solutions
Abstract
The chemical dissolution of the CdTe, ZnxCd1-xTe and Cd0.2Hg0.8 solid solutions single crystals in the HNO3 – HI – glycerin aqueous solutions has been investigated. The etching rate dependences of the mentioned above materials versus the iodine and organic content in the compositions and the kinetic peculiarities of the chemical dissolution have been determined. It was established that the dissolution rate of the semiconductor solid solutions in the HNO3 – HI – glycerin etchant compositions decreases with the increasing of oxidizer and glycerin. Using experimental data, the compositions of polishing solutions and the conditions of chemical-dynamic polishing of the CdTe, ZnxCd1-xTe and Cd0.2Hg0.8Te surfaces have been optimized. Keywords: semiconductor, solid solutions, single crystal, etchant, surface, chemical etching, polishing.
