Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction

Abstract

Photodetectors based on 2D transition metal dichalcogenides exhibit ever increasingly competitive performance, yet not superior to that of alternative technologies. Here, the authors devise a MoS2-based phototransistor with an out-of-plane junction, yielding a record detectivity combined with broadband response.