Electrochemical Ionic Synapses with Mg2+ as the Working Ion

Abstract

Abstract Dynamic doping by electrochemical ion intercalation is a promising mechanism for modulating electronic conductivity, allowing for energy‐efficient, brain‐inspired computing hardware. While proton‐based devices have achieved success in terms of speed and efficiency, the volatility and environmental pervasiveness of hydrogen (H) might limit the robustness of devices during fabrication, as well as the long‐term retention of devices after programming. This motivates the search for alternative working ions. In this work, a proof‐of‐concept is demonstrated for electrochemical ionic synapses (EIS) based on intercalation of Mg2+ ions. The reported device has a symmetric design, with MgxWO3 used as both the gate and channel material. Increasing the Mg fraction, x, in WO3 increases the electronic conductance in a continuum over a large range (80 nS − 2 mS). Ex situ characterization of the channel confirms that modulation of channel conductance is due to Mg2+ intercalation. Unlike H‐EIS which rapidly loses programmed conductance states over a few seconds when exposed to air, Mg‐EIS can be operated and has good retention in air, with no sign of degradation after 1 h. Mg2+ as a working ion with WO3 as the channel is a promising material system for EIS with long‐term retention and low energy consumption.

Keywords

• artificial synapses
• ECRAM
• EIS
• Mg intercalation