Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates

Abstract

Abstract Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved.

Keywords

• Molecular beam epitaxy
• InGaAs nanostructures
• GaAs(210)
• Lateral ordering