Effect of different parameters on the carrier mobility in NWTFET

Abstract

In this paper, we have studied the effect of different parameters on carrier mobility in NWFET devices. Their characteristics have been investigated using the non-equilibrium Green function (NEGF) method. Our work involves the carrier mobility µ as a function of VDS taken from 0.1 V to 1 V for various gate lengths, namely: 10, 20, 30, 40, and 50 nm. Then, the variation of µ as a function of width of the nanowire varied from 2 up to 6 nm. After that, we have simulated µ as a function of the oxide thickness for the values: 2, 4 and 6 nm. Moreover, the mobility has been considered as dependent on the composition of high-k materials, namely: SiO2, HfO2, ZrO2. Our results clearly show that device characteristics can be improved by selecting geometrical and physical parameters.

Keywords

• nanotransistor
• nwfet
• mobility
• negf