Drift-Diffusion Model parameterS Optimization

Abstract

A new approach of nanoscale MOSFETs electrical characteristics calculating, the essence of which is the use of correction factors, as well as such values of classic drift-diffusion models, which would effectively take into account the quantum-mechanical transport mechanisms is proposed. Modified direct search method of drift-diffusion model optimization for MOSFET with a 90 nm channel length is developed and used.

Keywords

• наноразмерный моп-транзистор
• компьютерное моделирование
• модель подвижности дарвиша
• оптимизация
• метод прямого поиска