Carrier density control of Sb-doped rutile-type SnO2 thin films and fabrication of a vertical Schottky barrier diode

Abstract

We report on the control of carrier density in r-SnO _2 thin films grown on isostructural r-TiO _2 substrates by doping with Sb aiming for power-electronics applications. The carrier density was tuned within a range of 3 × 10 ^16 –2 × 10 ^19 cm ^−3 . Two types of donors with different activation energies, attributed to Sb at Sn sites and oxygen vacancies, are present in the thin films. Both activation energies decrease as the concentration of Sb increases. A vertical Schottky barrier diode employing a Sb:r-SnO _2 /Nb:r-TiO _2 exhibits a clear rectifying property with a rectification ratio of 10 ^3 at ±1 V.

Keywords

• rutile-type oxides
• mist CVD
• Schottky barrier diode
• doping