Investigation of Physical Properties and Electrochemical Behavior of Nitrogen-Doped Diamond-Like Carbon Thin Films

Abstract

This work reports characterizations of diamond-like carbon (DLC) films used as electrodes for electrochemical applications. DLC thin films are prepared on glass slides and silicon substrates by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) using a gas mixture of methane and hydrogen. In addition, the DLC films are doped with nitrogen in order to reduce electrical resistivity. Compared to the undoped DLC films, the electrical resistivity of nitrogen-doped (N-doped) DLC films is decreased by three orders of magnitude. Raman spectroscopy and UV/Vis spectroscopy analyses show the structural transformation in N-doped DLC films that causes the reduction of band gap energy. Contact angle measurement at N-doped DLC films indicates increased hydrophobicity. The results obtained from the cyclic voltammetry measurements with Fe(CN)63-/Fe(CN)64- redox species exhibit the correlation between the physical properties and electrochemical behavior of DLC films.

Keywords

• Diamond-like carbon (DLC)
• Radio frequency plasma enhanced chemical vapor deposition (RF-PECVD)
• Nitrogen doping
• Energy band gap
• Electrochemical measurements