Tekhnologiya i Konstruirovanie v Elektronnoi Apparature (Apr 2012)

Properties of double p+-InP/n-InGaAsP/n-InP heterojunctions obtained by LPE method

  • Vakiv N. M.,
  • Krukovskii S. I.,
  • Sukach A. V.,
  • Tetyorkin V. V.,
  • Mrykhin I. A.,
  • Mikhashchuk Yu. S.,
  • Krukovskii R. S.

Journal volume & issue
no. 2
pp. 27 – 30

Abstract

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The double epitaxial p+-InP/n-InGaAsP/n-InP heterostructures with coinciding electrical and metallurgical boundaries has been obtained. Such coincidence is achieved due to growing an additional buffer n-InP layer and decreasing the time for growing an emitter p+-InP layer heavily doped by zinc. Electroluminescence spectra of such structures have a smaller half-width and the infrared radiation of higher power than the structures in which the p–n-junction is formed in the InGaAsP layer. These heterostructures are designed to create efficient IR LEDs with wavelength of 1,06 mm in spectrum maximum.

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