Identifying the enhancement mechanism of Al/MoO3 reactive multilayered films on the ignition ability of semiconductor bridge using a one-dimensional gas-solid two-phase flow model

Abstract

Energetic Semiconductor bridge (ESCB) based on reactive multilayered films (RMFs) has a promising application in the miniature and intelligence of initiator and pyrotechnics device. Understanding the ignition enhancement mechanism of RMFs on semiconductor bridge (SCB) during the ignition process is crucial for the engineering and practical application of advanced initiator and pyrotechnics devices. In this study, a one-dimensional (1D) gas-solid two-phase flow ignition model was established to study the ignition process of ESCB to charge particles based on the reactivity of Al/MoO3 RMFs. In order to fully consider the coupled exothermic between the RMFs and the SCB plasma during the ignition process, the heat release of chemical reaction in RMFs was used as an internal heat source in this model. It is found that the exothermal reaction in RMFs improved the ignition performance of SCB. In the process of plasma rapid condensation with heat release, the product of RMFs enhanced the heat transfer process between the gas phase and the solid charge particle, which accelerated the expansion of hot plasma, and heated the solid charge particle as well as gas phase region with low temperature. In addition, it made up for pressure loss in the gas phase. During the plasma dissipation process, the exothermal chemical reaction in RMFs acted as the main heating source to heat the charge particle, making the surface temperature of the charge particle, gas pressure, and gas temperature rise continuously. This result may yield significant advantages in providing a universal ignition model for miniaturized ignition devices.

Keywords

• Ignition enhancement mechanism
• 1D gas-solid two-phase flow
• Al/MoO3 reactive multilayered films
• Semiconductor bridge
• Miniaturized ignition device