npj 2D Materials and Applications (Apr 2017)
A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
- Xia Wan,
- Yang Xu,
- Hongwei Guo,
- Khurram Shehzad,
- Ayaz Ali,
- Yuan Liu,
- Jianyi Yang,
- Daoxin Dai,
- Cheng-Te Lin,
- Liwei Liu,
- Hung-Chieh Cheng,
- Fengqiu Wang,
- Xiaomu Wang,
- Hai Lu,
- Weida Hu,
- Xiaodong Pi,
- Yaping Dan,
- Jikui Luo,
- Tawfique Hasan,
- Xiangfeng Duan,
- Xinming Li,
- Jianbin Xu,
- Deren Yang,
- Tianling Ren,
- Bin Yu
Affiliations
- Xia Wan
- College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University
- Yang Xu
- College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University
- Hongwei Guo
- College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University
- Khurram Shehzad
- College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University
- Ayaz Ali
- College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University
- Yuan Liu
- Department of Chemistry and Biochemistry, University of California at Los Angeles
- Jianyi Yang
- College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University
- Daoxin Dai
- College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University
- Cheng-Te Lin
- Ningbo Institute of Industrial Technology, Chinese Academy of Sciences
- Liwei Liu
- State Key Laboratory of Nanodevices and Applications at Chinese Academy of Sciences
- Hung-Chieh Cheng
- Department of Chemistry and Biochemistry, University of California at Los Angeles
- Fengqiu Wang
- State Key Laboratory of Microstructure and School of Electronics Science and Engineering, Nanjing University
- Xiaomu Wang
- School of Engineering & Applied Science, Yale University
- Hai Lu
- State Key Laboratory of Microstructure and School of Electronics Science and Engineering, Nanjing University
- Weida Hu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Xiaodong Pi
- State Key Laboratory of Silicon Materials, Zhejiang University
- Yaping Dan
- University of Michigan-Shanghai Jiao Tong University Joint Institute
- Jikui Luo
- College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University
- Tawfique Hasan
- Department of Engineering, University of Cambridge
- Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California at Los Angeles
- Xinming Li
- Department of Electronic Engineering, The Chinese University of Hong Kong
- Jianbin Xu
- Department of Electronic Engineering, The Chinese University of Hong Kong
- Deren Yang
- State Key Laboratory of Silicon Materials, Zhejiang University
- Tianling Ren
- Institute of Microelectronics, Tsinghua University
- Bin Yu
- College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University
- DOI
- https://doi.org/10.1038/s41699-017-0008-4
- Journal volume & issue
-
Vol. 1,
no. 1
pp. 1 – 8
Abstract
Optoelectronics: Graphene breaks limit of silicon-based UV detection A high-performance graphene/silicon ultraviolet (UV) photodetector significantly increases the upper-limit of traditional silicon-based UV detectors. A team led by Yang Xu at China’s Zhejiang University fabricated silicon-based UV detectors using graphene with unique UV absorption property, leading to ultra-long lifetime of hot carriers that contribute to photocurrent, and even to carrier multiplication. In the near- and mid-UV regime, the improved performance parameters are photocurrent responsivity (0.20 A W−1), response time (100%). The key metrics of graphene/Si detector outperform those of UV detectors based on Si, GaN, SiC, etc. These results show great promise in applications such as wearable devices, secured mobile communication, and “dissipation-less” remote sensor networks.
