Nanoscale Research Letters (May 2019)

A Multi-level Memristor Based on Al-Doped HfO2 Thin Film

  • Lei Wu,
  • Hongxia Liu,
  • Jiabin Li,
  • Shulong Wang,
  • Xing Wang

DOI
https://doi.org/10.1186/s11671-019-3015-x
Journal volume & issue
Vol. 14, no. 1
pp. 1 – 7

Abstract

Read online

Abstract Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO2, have been favored by lots of researchers because of its simple structure, high integration, fast operation speed, low power consumption, and high compatibility with advanced (complementary metal oxide silicon) CMOS technologies. In this paper, a 20-level stable resistance states Al-doped HfO2-based memristor is presented. Its cycles endurance, data retention time, and resistance ratio are larger than 103, > 104 s, and > 10, respectively.

Keywords