GaInNas/GaAs QW Based Structures to Compensate Parasitic Effect of Quantum-Confined Stark Effect in Photodetector Applications

Katarzyna Bielak; Damian Pucicki; Wojciech Dawidowski; Mikolaj Badura; Beata Sciana; Marek Tlaczala

doi:10.15598/aeee.v16i3.2751

Advances in Electrical and Electronic Engineering (Jan 2018)

GaInNas/GaAs QW Based Structures to Compensate Parasitic Effect of Quantum-Confined Stark Effect in Photodetector Applications

Katarzyna Bielak,
Damian Pucicki,
Wojciech Dawidowski,
Mikolaj Badura,
Beata Sciana,
Marek Tlaczala

Affiliations

Katarzyna Bielak: Department of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland
Damian Pucicki: Department of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland
Wojciech Dawidowski: Department of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland
Mikolaj Badura: Department of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland
Beata Sciana: Department of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland
Marek Tlaczala: Department of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland

DOI: https://doi.org/10.15598/aeee.v16i3.2751
Journal volume & issue: Vol. 16, no. 3
pp. 374 – 379

Abstract

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The inhomogeneities of multicomponent semiconductor alloys, as well as phase segregation, can be utilized for enhancement of photodetector absorption properties and thus its efficiency. In this paper, the influence of external electric field on the probability of light absorption in the GaInNAs quantum well is discussed. Both phenomenon: indium and nitrogen composition gradient as well as step-like quantum well are applied to design the QW with compensation of the Quantum-Confined Stark Effect (QCSE) Parasitic effect of QCSE results from decrease of the wave functions overlapping in the QWs placed in reverse biased junction, which finally decrease the efficiency of the photodetector.

Published in Advances in Electrical and Electronic Engineering

ISSN: 1336-1376 (Print); 1804-3119 (Online)
Publisher: VSB-Technical University of Ostrava
Country of publisher: Czechia
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: http://advances.utc.sk/

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