AIP Advances (May 2017)

Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited MgAl2O4/Fe(001) magnetic tunnel junctions

  • Mohamed Belmoubarik,
  • Hiroaki Sukegawa,
  • Tadakatsu Ohkubo,
  • Seiji Mitani,
  • Kazuhiro Hono

DOI
https://doi.org/10.1063/1.4973393
Journal volume & issue
Vol. 7, no. 5
pp. 055908 – 055908-6

Abstract

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We investigated the effect of an Mg-Al layer insertion at the bottom interface of epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions (MTJs) on their spin-dependent transport properties. The tunnel magnetoresistance (TMR) ratio and differential conductance spectra for the parallel magnetic configuration exhibited clear dependence on the inserted Mg-Al thickness. A slight Mg-Al insertion (thickness 0.2 nm) induced a reduction of TMR ratios and featureless conductance spectra, indicating a degradation of the bottom-Fe/MgAl2O4 interface. Therefore, a minimal Mg-Al insertion was found to be effective to maximize the TMR ratio for a sputtered MgAl2O4-based MTJ.