Overview of FinFET device structure development

Abstract

With the rapid development of integrated circuit technology, the size of devices continues to shrink. When the channel of the field effect transistor is shortened to 22 nm, the traditional planar field effect transistor no longer meets the development needs. FinFET is a new type of three-dimensional device, which is currently widely researched and applied due to its good performance. It mainly introduces the basic structure and basic process flow of FinFET devices, as well as some improved FinFET device structures developed on the basic structure. Finally, combined with the reality, the future development of FinFET device structure is expected.

Keywords

• field effect transistor
• finfet
• device structure
• process