Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Leilei Xu; Jiafeng Feng; Kangkang Zhao; Weiming Lv; Xiufeng Han; Zhongyuan Liu; Xiaohong Xu; He Huang; Zhongming Zeng

doi:10.1155/2017/9042823

Advances in Condensed Matter Physics (Jan 2017)

Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Leilei Xu,
Jiafeng Feng,
Kangkang Zhao,
Weiming Lv,
Xiufeng Han,
Zhongyuan Liu,
Xiaohong Xu,
He Huang,
Zhongming Zeng

Affiliations

Leilei Xu: School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 41004, China
Jiafeng Feng: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Kangkang Zhao: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, China
Weiming Lv: State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
Xiufeng Han: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Zhongyuan Liu: State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
Xiaohong Xu: School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 41004, China
He Huang: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, China
Zhongming Zeng: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, China

DOI: https://doi.org/10.1155/2017/9042823
Journal volume & issue: Vol. 2017

Abstract

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Two-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM) electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.

Published in Advances in Condensed Matter Physics

ISSN: 1687-8108 (Print); 1687-8124 (Online)
Publisher: Hindawi Limited
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://onlinelibrary.wiley.com/journal/4042

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