Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifier

Sunwoo Heo; Min Gyu Kwon; Ho-In Lee; Cihyun Kim; Seung Mo Kim; Kyoung Eun Chang; Yongsu Lee; Byoung Hun Lee

doi:10.1063/1.5117894

AIP Advances (Sep 2019)

Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifier

Sunwoo Heo,
Min Gyu Kwon,
Ho-In Lee,
Cihyun Kim,
Seung Mo Kim,
Kyoung Eun Chang,
Yongsu Lee,
Byoung Hun Lee

Affiliations

Sunwoo Heo: Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Min Gyu Kwon: Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Ho-In Lee: Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Cihyun Kim: Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Seung Mo Kim: Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Kyoung Eun Chang: Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Yongsu Lee: Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Byoung Hun Lee: Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea

DOI: https://doi.org/10.1063/1.5117894
Journal volume & issue: Vol. 9, no. 9
pp. 095009 – 095009-5

Abstract

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Tunable DC voltage control circuit based on a half-wave rectifier was developed using a graphene–germanium barristor. The output DC voltage level could be modulated at 30–100% of the peak voltage by controlling the Schottky barrier height between graphene and germanium using a gate bias. Owing to the simple and low-temperature integration process, this device can be used for a variable DC power supply in monolithically integrated circuits or flexible devices.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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