Materials (Oct 2022)

Low-Frequency Noise Characteristics in HfO<sub>2</sub>-Based Metal-Ferroelectric-Metal Capacitors

  • Ki-Sik Im,
  • Seungheon Shin,
  • Chan-Hee Jang,
  • Ho-Young Cha

DOI
https://doi.org/10.3390/ma15217475
Journal volume & issue
Vol. 15, no. 21
p. 7475

Abstract

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The transport mechanism of HfO2-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current–voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole–Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities (SI) obtained from the LFN measurements followed 1/f noise shapes and exhibited a constant electric field (E) × SI/I2 noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry.

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