Materials (Oct 2022)
Low-Frequency Noise Characteristics in HfO<sub>2</sub>-Based Metal-Ferroelectric-Metal Capacitors
Abstract
The transport mechanism of HfO2-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current–voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole–Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities (SI) obtained from the LFN measurements followed 1/f noise shapes and exhibited a constant electric field (E) × SI/I2 noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry.
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