Effect of the electron irradiation on electrical properties of n-InSe and their anisotropy

Abstract

Changes of the conductivities along and across the layers as well as of the Hall coefficient are investigated in the temperature range of 80 to 400 K for n-InSe single crystals of different resistivity after their irradiation with different doses of high-energy electrons. For the high-resistive samples irradiated with a dose of 30 kGy non-monotonous variations of RH and μ⊥С with temperature are explained within a 2D-3D model of electron gas. It is established that at higher doses the mobility along the layers and vertical conductivity essentially decrease whereas the conductivity anisotropy and energy barrier between the layers increase significantly. The obtained results are explained due to the stronger contribution of 2D electrons after irradiation of n-InSe.

Keywords

• indium selenide
• electron irradiation
• 2D-3D model
• Hall coefficient
• conductivity anisotropy.