Origin of extra diffraction spots for high crystalline alpha-Ga2O3

Yong-Hee Lee; Duyoung Yang; Byeongjun Gil; Mi-Hyang Sheen; Euijoon Yoon; Yongjo Park; Ho-Won Jang; Sangmoon Yoon; Miyoung Kim; Young-Woon Kim

doi:10.1063/5.0136783

AIP Advances (Feb 2023)

Origin of extra diffraction spots for high crystalline alpha-Ga2O3

Yong-Hee Lee,
Duyoung Yang,
Byeongjun Gil,
Mi-Hyang Sheen,
Euijoon Yoon,
Yongjo Park,
Ho-Won Jang,
Sangmoon Yoon,
Miyoung Kim,
Young-Woon Kim

Affiliations

Yong-Hee Lee: Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Duyoung Yang: Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Byeongjun Gil: Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Mi-Hyang Sheen: Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Euijoon Yoon: Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Yongjo Park: Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea
Ho-Won Jang: Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Sangmoon Yoon: Department of Physics, Gachon University, Seougnam Gyeonggi-do 13120, Republic of Korea
Miyoung Kim: Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Young-Woon Kim: Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea

DOI: https://doi.org/10.1063/5.0136783
Journal volume & issue: Vol. 13, no. 2
pp. 025148 – 025148-6

Abstract

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This work has investigated the microstructure characteristics of high-quality alpha-Ga2O3 thin film grown on the Al2O3 single crystal substrate membrane. Hetero-epitaxial alpha Ga2O3 crystals reveal the formation of a three-fold symmetry at the initial stage of the growth by the oxygen template provided by the Al2O3. Inversion domains are found, and they have a 180° inverted configuration from the surroundings. These IDs lead to extra diffraction spots when observed along [110] and [010].

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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