A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance

Qianyu Hou; Haifan You; Qing Cai; Hui Guo; Pengfei Shao; Danfeng Pan; Le Yu; Dunjun Chen; Hai Lu; Rong Zhang; Youdou Zheng

doi:10.1109/JPHOT.2021.3086855

IEEE Photonics Journal (Jan 2021)

A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance

Qianyu Hou,
Haifan You,
Qing Cai,
Hui Guo,
Pengfei Shao,
Danfeng Pan,
Le Yu,
Dunjun Chen,
Hai Lu,
Rong Zhang,
Youdou Zheng

Affiliations

Qianyu Hou: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China
Haifan You: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China
Qing Cai: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China
Hui Guo: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China
Pengfei Shao: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China
Danfeng Pan: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China
Le Yu: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China
Dunjun Chen: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China
Hai Lu: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China
Rong Zhang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China
Youdou Zheng: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China

DOI: https://doi.org/10.1109/JPHOT.2021.3086855
Journal volume & issue: Vol. 13, no. 3
pp. 1 – 8

Abstract

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We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition and thickness of the AlGaN layers. To improve the photoelectric response of the narrow-band PDs, a polarization electric field with the same direction with the applied bias field was introduced to the absorption layer by adjusting the Al composition ratio between the p-type AlGaN layer and i-type AlGaN absorption layer. The polarization enhanced narrow-band PD exhibited a higher external quantum efficiency (EQE) of 82% than the conventional one with an EQE of 67%. Meanwhile, a low dark current density of 1.7 nA/cm2 and four orders of magnitude UV-visible rejection ratio were achieved for the enhanced narrow-band PDs with a maximum photocurrent responsivity of 202 mA/W at 304 nm.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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