Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies

Chih-Yang Huang; Xin-Ying Tsai; Fu-Gow Tarntair; Catherine Langpoklakpam; Thien Sao Ngo; Pei-Jung Wang; Yu-Cheng Kao; Yi-Kai Hsiao; Niall Tumilty; Hao-Chung Kuo; Tian-Li Wu; Ching-Lien Hsiao; Ray-Hua Horng

Materials Today Advances (Jun 2024)

Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies

Chih-Yang Huang,
Xin-Ying Tsai,
Fu-Gow Tarntair,
Catherine Langpoklakpam,
Thien Sao Ngo,
Pei-Jung Wang,
Yu-Cheng Kao,
Yi-Kai Hsiao,
Niall Tumilty,
Hao-Chung Kuo,
Tian-Li Wu,
Ching-Lien Hsiao,
Ray-Hua Horng

Affiliations

Chih-Yang Huang: Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Xin-Ying Tsai: Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Fu-Gow Tarntair: Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Catherine Langpoklakpam: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang-Ming Chiao Tung University, Hsinchu 30010, Taiwan
Thien Sao Ngo: International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Pei-Jung Wang: International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Yu-Cheng Kao: Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan
Yi-Kai Hsiao: Hon Hai Research Institute, Semiconductor Research Center, Taipei 11492, Taiwan
Niall Tumilty: International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Hao-Chung Kuo: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang-Ming Chiao Tung University, Hsinchu 30010, Taiwan; Hon Hai Research Institute, Semiconductor Research Center, Taipei 11492, Taiwan
Tian-Li Wu: Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Ching-Lien Hsiao: Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Ray-Hua Horng: Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; Corresponding author. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.

Journal volume & issue: Vol. 22
p. 100499

Abstract

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Although advancements in n- and p-doping of gallium oxide (Ga2O3) are underway, the realization of functional pn diodes remains elusive. Here, we present the successful fabrication of a Ga2O3 pn diode utilizing ion implantation technology. The Ga2O3 epilayers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). P-type conductivity Ga2O3 epilayer, confirmed by Hall effect analysis, was achieved by phosphorus (P) ion implantation followed with a rapid thermal annealing (RTA) process. This p-Ga2O3 epilayer reveals a significant reduction in resistivity ( 3kT/q) and remained very low at 2✕10−8 A, as the diode operated at 150oC. The behavior could be due to Ga2O3 being a wide bandgap material.

Published in Materials Today Advances

ISSN: 2590-0498 (Online)
Publisher: Elsevier
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.journals.elsevier.com/materials-today-advances

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