Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion

Abstract

Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons ( I 2 I ) and VZn acceptor- bound excitons ( D 1 I ). A model of radiation mechanisms, which explain the redistribution of the edge and long-wave PL bands intensities with increasing doping level of the samples, is proposed.