Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

Rajesh Kappera; Damien Voiry; Sibel Ebru Yalcin; Wesley Jen; Muharrem Acerce; Sol Torrel; Brittany Branch; Sidong Lei; Weibing Chen; Sina Najmaei; Jun Lou; Pulickel M. Ajayan; Gautam Gupta; Aditya D. Mohite; Manish Chhowalla

doi:10.1063/1.4896077

APL Materials (Sep 2014)

Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

Rajesh Kappera,
Damien Voiry,
Sibel Ebru Yalcin,
Wesley Jen,
Muharrem Acerce,
Sol Torrel,
Brittany Branch,
Sidong Lei,
Weibing Chen,
Sina Najmaei,
Jun Lou,
Pulickel M. Ajayan,
Gautam Gupta,
Aditya D. Mohite,
Manish Chhowalla

Affiliations

Rajesh Kappera: Materials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, USA
Damien Voiry: Materials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, USA
Sibel Ebru Yalcin: MPA-11 Materials Synthesis and Integrated Devices, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Wesley Jen: Materials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, USA
Muharrem Acerce: Materials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, USA
Sol Torrel: Materials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, USA
Brittany Branch: MPA-11 Materials Synthesis and Integrated Devices, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Sidong Lei: Mechanical Engineering and Materials Science Department, Rice University, Houston, Texas 77005, USA
Weibing Chen: Mechanical Engineering and Materials Science Department, Rice University, Houston, Texas 77005, USA
Sina Najmaei: Mechanical Engineering and Materials Science Department, Rice University, Houston, Texas 77005, USA
Jun Lou: Mechanical Engineering and Materials Science Department, Rice University, Houston, Texas 77005, USA
Pulickel M. Ajayan: Mechanical Engineering and Materials Science Department, Rice University, Houston, Texas 77005, USA
Gautam Gupta: MPA-11 Materials Synthesis and Integrated Devices, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Aditya D. Mohite: MPA-11 Materials Synthesis and Integrated Devices, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Manish Chhowalla: Materials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, USA

DOI: https://doi.org/10.1063/1.4896077
Journal volume & issue: Vol. 2, no. 9
pp. 092516 – 092516-6

Abstract

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Two dimensional transition metal dichalcogenides (2D TMDs) offer promise as opto-electronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS2. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS2 on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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