Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor Structure

Wanli Zhang; Guangzhao Wang; Minghua Tang; Lian Cui; Teng Wang; Pengyu Su; Zhuojun Chen; Xiaojiang Long; Yongguang Xiao; Shaoan Yan

doi:10.1109/ACCESS.2020.3000865

IEEE Access (Jan 2020)

Impact of Radiation Effect on Ferroelectric Al-Doped HfO<sub>2</sub> Metal-Ferroelectric- Insulator-Semiconductor Structure

Wanli Zhang,
Guangzhao Wang,
Minghua Tang,
Lian Cui,
Teng Wang,
Pengyu Su,
Zhuojun Chen,
Xiaojiang Long,
Yongguang Xiao,
Shaoan Yan

Affiliations

Wanli Zhang: ORCiD; School of Electronic Information and Engineering, Yangtze Normal University, Chongqing, China
Guangzhao Wang: School of Electronic Information and Engineering, Yangtze Normal University, Chongqing, China
Minghua Tang: School of Material Sciences and Engineering, Xiangtan University, Xiangtan, China
Lian Cui: School of Electronic Information and Engineering, Yangtze Normal University, Chongqing, China
Teng Wang: Shanghai Institute of Space Power-Sources, Shanghai, China
Pengyu Su: School of Electronic Information and Engineering, Yangtze Normal University, Chongqing, China
Zhuojun Chen: ORCiD; School of Physics and Electronics, Hunan University, Changsha, China
Xiaojiang Long: School of Electronic Information and Engineering, Yangtze Normal University, Chongqing, China
Yongguang Xiao: School of Material Sciences and Engineering, Xiangtan University, Xiangtan, China
Shaoan Yan: School of Mechanical Engineering, Xiangtan University, Xiangtan, China

DOI: https://doi.org/10.1109/ACCESS.2020.3000865
Journal volume & issue: Vol. 8
pp. 108121 – 108126

Abstract

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The γ-ray total dose radiation effects on ferroelectric Al-doped HfO2 (HfAlO) thin films with an n-type Si substrate were studied. The I-V, P-V, C-V and fatigue characteristics of the HfAlO-based Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure were analyzed with the increasing total dose from 0 to 1 Mrad (Si). The remnant polarization (Pr) values, the capacitance (C) values and the switching voltage (Vc) of this MFIS gate structure decreased with the increasing total dose. A TCAD model of Metal/HfAlO/SiO2/Si (MFIS) was proposed to explain the degradation mechanism of ferroelectric properties of the MFIS structure. We find that the new interface defects caused by radiation can reduce the electric field strength with the increasing total dose, which can significantly influence the irradiation properties of the HfAlO/SiO2/n-Si gate structure. These results provide the basis to applications for the HfO2-based devices in radiation working environment.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

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