Optimization of infrared detector HgCdTe in photoconductive‏ ‏in the spectral region 2-6 µm‎ ‎

Abstract

In this paper a new method in design and modeling of infrared detector HgCdTe in photoconductive mode ‎is presented. In this method after scrutiny mechanical, optical, electrical properties of semiconductor ‎HgCdTe and solving the photoconductive equations, software of equations is programmed and with initial ‎value and repeat cycle, their changes to key parameters such as thickness, wavelength and amount of ‎impurities are calculated and finally, performance of detector is optimized.‎ Modeling of photoconductive detector has been done in temperature of 300K and 2-6 µm wavelength range‎‎, according to obtained results, optimal specific detectivity is 3×109 cmHz1/2W-1‎‏ ‏in 5.77 µm wavelength.‎

Keywords

• low band gap semiconductor
• hgcdte
• photoconductive
• infrared detector