APL Photonics (Aug 2024)

Mid-infrared silicon photonics: From benchtop to real-world applications

  • Colin J. Mitchell,
  • Tianhui Hu,
  • Shiyu Sun,
  • Callum J. Stirling,
  • Milos Nedeljkovic,
  • Anna C. Peacock,
  • Graham T. Reed,
  • Goran Z. Mashanovich,
  • David J. Rowe

DOI
https://doi.org/10.1063/5.0222890
Journal volume & issue
Vol. 9, no. 8
pp. 080901 – 080901-15

Abstract

Read online

Silicon photonics is one of the most dynamic fields within photonics, and it has seen huge progress in the last 20 years, addressing applications in data centers, autonomous cars, and sensing. It is mostly focused on the telecommunications wavelength range (1.3 and 1.55 µm), where silicon becomes transparent. In this range, there are excellent light sources and photodetectors, as well as optical fibers operating with extremely low losses and dispersion. It is a technology that hugely benefits from the availability of complementary metal–oxide–semiconductor (CMOS) fabrication infrastructure and techniques used for microelectronics. Silicon and germanium, as another CMOS compatible group IV material, are transparent beyond the wavelength of 2 µm. The mid-IR wavelength range (2–20 µm) is of particular importance as it contains strong absorption signatures of many molecules. Therefore, Si- and Ge-based platforms open up the possibility of small and cost-effective sensing in the fingerprint region for medical and environmental monitoring. In this paper, we discuss the current mid-IR silicon photonics landscape, future directions, and potential applications of the field.