Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time

Yangfeng Li; Zijing Jin; Yu Han; Chunyu Zhao; Jie Huang; Chak Wah Tang; Jiannong Wang; Kei May Lau

doi:10.1088/2053-1591/ab5be0

Materials Research Express (Jan 2019)

Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time

Yangfeng Li,
Zijing Jin,
Yu Han,
Chunyu Zhao,
Jie Huang,
Chak Wah Tang,
Jiannong Wang,
Kei May Lau

Affiliations

Yangfeng Li: ORCiD; Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong
Zijing Jin: Department of Physics, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong
Yu Han: ORCiD; Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong
Chunyu Zhao: Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong; Department of Physics, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong
Jie Huang: Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong
Chak Wah Tang: Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong
Jiannong Wang: Department of Physics, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong
Kei May Lau: Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong

DOI: https://doi.org/10.1088/2053-1591/ab5be0
Journal volume & issue: Vol. 7, no. 1
p. 015903

Abstract

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The effect of different growth interruption time on the surface morphology and optical properties of InGaN quantum dots (QDs) grown on 2-inch silicon substrates is investigated. The surface becomes rougher and the photoluminescence intensity has been enhanced significantly when employing the growth interruption method. Temperature-dependent photoluminescence and excitation power-dependent photoluminescence both present unchanged peak energy and line-width of QDs. The sharp increase of PL intensity in medium temperature regime is attributed to the fingerprint of the existence of InGaN QDs. The shape of the QDs are further confirmed by the transmission electron microscopy with a size of 3 nm by 4 nm. Among the samples, a growth interruption time of 30 s gives the best optical performance.

Published in Materials Research Express

ISSN: 2053-1591 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials; Technology: Chemical technology
Website: https://iopscience.iop.org/journal/2053-1591

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