Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks

Abstract

This paper reports a simulation study concerning the effect of yttrium oxide stoichiometry on output features of a memristor-based single layer perceptron neural network. To carry out this investigation, a material-oriented behavioral compact model for bipolar-type memristive devices was developed and tested. The model is written for the SPICE (Simulation Program with Integrated Circuits Emphasis) simulator and considers as one of its inputs a measure of the oxygen flow used during the deposition of the switching layer. After a thorough statistical calibration of the model parameters using experimental current–voltage characteristics associated with different fabrication conditions, the corresponding curves were simulated and the results were compared with the original data. In this way, the average switching behavior of the structures (low and high current states, set and reset voltages, etc.) as a function of the oxygen content can be forecasted. In a subsequent phase, the collective response of the devices when used in a neural network was investigated in terms of the output features of the network (mainly power dissipation and power efficiency). The role played by parasitic elements, such as the line resistance and the read voltage influence on the inference accuracy, was also explored. Since a similar strategy can be applied to any other material-related fabrication parameter, the proposed approach opens up a new dimension for circuit designers, as the behavior of complex circuits employing devices with specific characteristics can be realistically assessed before fabrication.