Design of a differential power oscillator for 433 MHz WPT using e-GaN HEMTs

Abstract

This paper presents a new differential power oscillator design based on a differential class-E power amplifier. The designs use high power enhancement-GaN HEMT (e-GaN) for its fast switching time, low ON resistance and wide energy band gap properties. The target application is far field wireless power transfer for wireless charging applications. The initial guess for design parameters follows the well known Sokal approach then LTSpice simulator is used to finalize the design. The simulated output power of the power oscillator is 60 W at the 433 MHz ISM band with high DC-to-RF conversion efficiency. Effect of process and design parameter variability is considered to assess the design sensitivity to manufacturing tolerances in both active and passive components.

Keywords

• Wireless power transfer
• Enhancement GaN transistors
• Class E- power amplifiers and power oscillators