Electric Field Sensor Based on High Q Fano Resonance of Nano-Patterned Electro-Optic Materials

Xiaowei Yin; Fengli Liu; Wentao Qiu; Can Liu; Heyuan Guan; Huihui Lu

doi:10.3390/photonics9060431

Photonics (Jun 2022)

Electric Field Sensor Based on High Q Fano Resonance of Nano-Patterned Electro-Optic Materials

Xiaowei Yin,
Fengli Liu,
Wentao Qiu,
Can Liu,
Heyuan Guan,
Huihui Lu

Affiliations

Xiaowei Yin: Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
Fengli Liu: Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
Wentao Qiu: Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
Can Liu: Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
Heyuan Guan: Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, Jinan University, Guangzhou 510632, China
Huihui Lu: Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China

DOI: https://doi.org/10.3390/photonics9060431
Journal volume & issue: Vol. 9, no. 6
p. 431

Abstract

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This paper presents theoretical studies of Fano resonance based electric-field (E-field) sensors. E-field sensor based on two electro-optical (EO) materials i.e., barium titanate (BaTiO3, BTO) nanoparticles and relaxor ferroelectric material Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) combined with nanostructure are studied. As for the BTO based E-field sensor, a configuration of filling the BTO nanoparticles into a nano-patterned thin film silicon is proposed. The achieved resonance quality factor (Q) is 11,855 and a resonance induced electric field enhancement factor is of around 105. As for the design of PMN-PT based E-field sensor, a configuration by combining two square lattice air holes in PMN-PT thin film but with one offsetting hole left is chosen. The achieved resonance Q is of 9,273 and an electric field enhancement factor is of around 96. The resonance wavelength shift sensitivity of PMN-PT nanostructured can reach up to 4.768 pm/(V/m), while the BTO based nanostructure has a sensitivity of 0.1213 pm/(V/m). If a spectrum analyzer with 0.1 pm resolution is considered, then the minimum detection of the electric field Emin is 20 mV/m and 0.82 V/m for PMN-PT and BTO based nanostructures, respectively. The nano-patterned E-field sensor studied here are all dielectric, it has therefore the advantage of large measurement bandwidth, high measurement fidelity, high spatial resolution and high sensitivity.

Published in Photonics

ISSN: 2304-6732 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics
Website: http://www.mdpi.com/journal/photonics

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