Scientific Reports (Jul 2017)

Interface-induced spontaneous positive and conventional negative exchange bias effects in bilayer La0.7Sr0.3MnO3/Eu0.45Sr0.55MnO3 heterostructures

  • J. Krishna Murthy,
  • P. S. Anil Kumar

DOI
https://doi.org/10.1038/s41598-017-07033-x
Journal volume & issue
Vol. 7, no. 1
pp. 1 – 11

Abstract

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Abstract We report zero-field-cooled spontaneous-positive and field-cooled conventional-negative exchange bias effects in epitaxial bilayer composed of La0.7Sr0.3MnO3 (LSMO) with ferromagnetic (FM) and Eu0.45Sr0.55MnO3 (ESMO) with A-type antiferromagnetic (AF) heterostructures respectively. A temperature dependent magnetization study of LSMO/ESMO bilayers grown on SrTiO3 (001) manifest FM ordering (TC) of LSMO at ~320 K, charge/orbital ordering of ESMO at ~194 K and AF ordering (TN) of ESMO at ~150 K. The random field Ising model has demonstrated an interesting observation of inverse dependence of exchange bias effect on AF layer thickness due to the competition between FM-AF interface coupling and AF domain wall energy. The isothermally field induced unidirectional exchange anisotropy formed at the interface of FM-LSMO layer and the kinetically phase-arrested magnetic phase obtained from the metamagnetic AF-ESMO layer could be responsible for the spontaneous exchange bias effect. Importantly, no magnetic poling is needed, as necessary for the applications. The FM-AF interface exchange interaction has been ascribed to the AF coupling with $$\sum {J}_{ex}\vec{{S}_{{\rm{FM}}}}\cdot \vec{{S}_{{\rm{AF}}}}$$ ∑JexSFM⃗⋅SAF⃗ ($${J}_{ex}\approx {J}_{AF}$$ Jex≈JAF , coupling constant between AF spins) for the spontaneous positive hysteresis loop shift, and the field-cooled conventional exchange bias has been attributed to the ferromagnetically exchanged interface with $${J}_{ex}\approx {J}_{F}$$ Jex≈JF (coupling constant between FM spins).