Multifunctional homojunction gallium arsenide n–p–m-structure

Abstract

The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are analyzed depending on the mode of inclusion. It is shown the multifunctionality of offered homojunction structure that is perspective for creating the optical receiver or the optical transformer.

Keywords

• current amplification effect
• phototransistor
• base
• barrier
• modulation mode