Study on the Influence of KOH Wet Treatment on Red μLEDs

Abstract

InGaN-based red micro-light-emitting diodes (µLEDs) of different sizes were prepared in this work. The red GaN epilayers were grown on 4-inch sapphire substrates through metal-organic chemical vapor deposition (MOCVD). Etching, sidewall treatment, and p- and n-contact deposition were involved in the fabrication process. Initially, the etching process would cause undesirable damage to the GaN sidewalls, which leads to an increase in leakage current. Hence, we employed KOH wet treatment to rectify the defects on the sidewalls and conducted a comparative and systematic analysis of electrical as well as optical properties. We observed that the µLEDs with a size of 5 µm exhibited a substantial leakage current, which was effectively mitigated by the application of KOH wet treatment. In terms of optical performance, the arrays with KOH demonstrated improved light output power (LOP). Additionally, while photoelectric performance exhibited a decline with increased current density, the devices treated with KOH consistently outperformed their counterparts in terms of optoelectronic efficiency. It is noteworthy that the optimized devices displayed enhanced photoelectric characteristics without significantly altering their original peak wavelength and FWHM. Our findings point to the elimination of surface non-radiative recombination by KOH wet treatment, thereby enhancing the performance of small-sized red µLEDs, which has significant potential in realizing full-color micro-displays in near-eye projection applications.

Keywords

• µLED
• GaN
• KOH treatment
• sidewall damage