Journal of Telecommunications and Information Technology (Mar 2005)
Gate dielectrics: process integration issues and electrical properties
Abstract
In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with the high-k material have been developed and were applied for realisation of MOS structures. For the first time Pr2O3 has been integrated successfully in a conventional MOS process with n poly-silicon gate electrode. The electrical properties of Pr2O3 MOS capacitors are presented and discussed.
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