Muonium state exchange dynamics in n-type GaAs

Abstract

Muonium (Mu), a pseudoisotope of hydrogen with a positively charged muon in place of the proton, takes the form Mu^{+,0,−} (like isolated hydrogen, i.e., H^{+,0,−}) in semiconductors. The specifics of the charge state depend on the local electronic environment of the host. After initial muon implantation, generated Mu centers interact with free charge carriers and electronic spins, transition between sites, and form a dynamic network of state exchange. We identified the model of Mu dynamics in n-type GaAs using the density matrix simulation method and photoexcited muon spin spectroscopy technique. Fitting to the dark and illuminated μSR data provided transition rates between Mu states, revealing the underlying mechanisms at play between the Mu centers (cf. isolated H) and the host. Deduced capture/scattering cross sections of the Mu states reflected the microscopic dynamics of Mu. Illumination studies enabled us to measure interactions between Mu and minority carriers, which would be unavailable in dark measurements without heating. The methodology developed in this study may be applied to other semiconductor systems for a deeper understanding of the Mu state exchange dynamics.