St. Petersburg Polytechnical University Journal: Physics and Mathematics (Mar 2024)
Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates
Abstract
The paper presents the results of numerical simulation of the heterostructural diodes operation based on the array of indium arsenide nanowires on the silicon substrates with different polarities, namely n- or p-types. It has been found that it is possible to achieve theoretical values of the ideality factor equal to 1.1 and 2.1 respectively. The high quantum efficiency values are typical for the investigated heterostructures during separation of photogenerated charge carriers in the temperature range of 150–300 K.
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