Nanoscale Research Letters (Jan 2010)

High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors

  • Kim Sangsig,
  • Choi Chang-Young,
  • Lee Ji-Hoon,
  • Koh Jung-Hyuk,
  • Ha Jae-Geun,
  • Koo Sang-Mo

Journal volume & issue
Vol. 5, no. 11
pp. 1795 – 1799

Abstract

Read online

Abstract We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25–150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (−5.2 × 10−6).

Keywords