The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

Ashith V K; Priya K; Muhammed Ali A V; Rashmitha Keshav; Gowrish K Rao; Mahesha M G

doi:10.1088/2053-1591/ab5ec4

Materials Research Express (Jan 2020)

The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

Ashith V K,
Priya K,
Muhammed Ali A V,
Rashmitha Keshav,
Gowrish K Rao,
Mahesha M G

Affiliations

Ashith V K: Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Udupi, Karnataka-576104, India
Priya K: Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Udupi, Karnataka-576104, India
Muhammed Ali A V: Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Udupi, Karnataka-576104, India
Rashmitha Keshav: Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Udupi, Karnataka-576104, India
Gowrish K Rao: ORCiD; Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Udupi, Karnataka-576104, India
Mahesha M G: Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Udupi, Karnataka-576104, India

DOI: https://doi.org/10.1088/2053-1591/ab5ec4
Journal volume & issue: Vol. 7, no. 2
p. 026404

Abstract

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The SILAR deposited CdS films were incorporated with various concentrations of zinc using zinc acetate and zinc chloride precursors. The presence of zinc was found to alter the crystal structure and energy bandgap of the films. The bandgap increased by nearly 44% with the increase of zinc concentration in the films. The photoluminescence spectra of the films revealed the presence of several localized defects levels within the forbidden bandgap. The peak spectral response wavelength was found to vary from 500 nm to 400 nm with the increase of zinc. The photocurrent was found to increase with the Cd:Zn ratio. The films with relatively high concentrations of zinc were found to be better suited for the photodetector applications due to their higher photocurrent to dark current ratio.

Published in Materials Research Express

ISSN: 2053-1591 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials; Technology: Chemical technology
Website: https://iopscience.iop.org/journal/2053-1591

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