The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects

Abstract

Abstract We have designed high-efficient spin-filtering junctions composed of graphene and silicon carbide nanoribbons. We have calculated the spin and charge transport in the junction by non-equilibrium Green’s function formalism combined with the density functional theory to find its spin-dependent electrical conductance, thermal conductance and Seebeck coefficient. In addition, the effect of Si and C atoms vacancies on the transport properties of the junction has been carefully investigated. The enhanced spin-filtering is clearly observed due to the edge and vacancy effects. On the other hand, vacancy defects increase the electrical and spin conductances of the junctions. The results show that the considered junctions are half-metal with reduced thermal conductance which makes them a suitable spin-dependent thermoelectric device. Our results predict the promising potential of the considered junctions for application in spintronic devices.