Memories - Materials, Devices, Circuits and Systems (Jul 2023)

Flux-charge analysis and experimental verification of a parallel Memristor–Capacitor circuit

  • M.A. Carrasco-Aguilar,
  • F.E. Morales-López,
  • C. Sánchez-López,
  • Rocio Ochoa-Montiel

Journal volume & issue
Vol. 4
p. 100043

Abstract

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In this article, the flux-charge analysis method is applied to obtain the theoretical response of the voltage generated in a parallel Memristor–Capacitor (M–C) circuit excited by an input pulse generator with a 100 kHz frequency, 5 V amplitude and a 50 ohms output impedance. The theoretical solution of the nonlinear ordinary differential equation that results when applying the method is reached by a numerical method. As a memristive circuit, a previously reported floating memristor emulator was used. The response obtained is compared with the experimental response, generating evidence that the applied analysis method yields an acceptable margin of error with regards to the experimental results obtained, contrasting with other similar reports, where the analyzes are based on theoretical memristive models, and show simulation results only. Summary, the paper would contribute to the analysis and experimental verification of the parallel M–C circuit subjected to a real switched exciting source, using a memristance equation established in an emulator that is different from the equations commonly used in the literature.

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