Temperature characteristics of silicon photoelectronic multipliers

Abstract

The investigations results of the temperature dependences of the multiplication coefficients of the dark current and photocurrent for silicon photoelectric multipliers are presented. It is shown to what extent the decrease in temperature effects to the change in the photocurrent gain and leads to a decrease of the series resistance of the microplasma breakdown. Keywords: silicon photoelectric multipliers, photocurrent gain, microplasma breakdown.

Keywords

• кремниевые фотоэлектронные умножители
• коэффициент усиления фототока
• микроплазменный пробой