Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature

L. Chen; M. Decker; M. Kronseder; R. Islinger; M. Gmitra; D. Schuh; D. Bougeard; J. Fabian; D. Weiss; C. H. Back

doi:10.1038/ncomms13802

Nature Communications (Dec 2016)

Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature

L. Chen,
M. Decker,
M. Kronseder,
R. Islinger,
M. Gmitra,
D. Schuh,
D. Bougeard,
J. Fabian,
D. Weiss,
C. H. Back

Affiliations

L. Chen: Institute of Experimental and Applied Physics, University of Regensburg
M. Decker: Institute of Experimental and Applied Physics, University of Regensburg
M. Kronseder: Institute of Experimental and Applied Physics, University of Regensburg
R. Islinger: Institute of Experimental and Applied Physics, University of Regensburg
M. Gmitra: Institute of Theoretical Physics, University of Regensburg
D. Schuh: Institute of Experimental and Applied Physics, University of Regensburg
D. Bougeard: Institute of Experimental and Applied Physics, University of Regensburg
J. Fabian: Institute of Theoretical Physics, University of Regensburg
D. Weiss: Institute of Experimental and Applied Physics, University of Regensburg
C. H. Back: Institute of Experimental and Applied Physics, University of Regensburg

DOI: https://doi.org/10.1038/ncomms13802
Journal volume & issue: Vol. 7, no. 1
pp. 1 – 7

Abstract

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Interfacial spin-orbit torque allows electrical manipulation of magnetization, but this has been shown mostly in polycrystalline metal bilayers. Here the authors show robust spin-orbit torque in single crystalline Fe/GaAs interface at room temperature, observing conversion between spin and charge current.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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