Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide

Gunawan Witjaksono; Muhammad Junaid; Mohd Haris Khir; Zaka Ullah; Nelson Tansu; Mohamed Shuaib Bin Mohamed Saheed; Muhammad Aadil Siddiqui; Saeed S. Ba-Hashwan; Abdullah Saleh Algamili; Saeed Ahmed Magsi; Muhammad Zubair Aslam; Rab Nawaz

doi:10.3390/molecules26216424

Molecules (Oct 2021)

Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide

Gunawan Witjaksono,
Muhammad Junaid,
Mohd Haris Khir,
Zaka Ullah,
Nelson Tansu,
Mohamed Shuaib Bin Mohamed Saheed,
Muhammad Aadil Siddiqui,
Saeed S. Ba-Hashwan,
Abdullah Saleh Algamili,
Saeed Ahmed Magsi,
Muhammad Zubair Aslam,
Rab Nawaz

Affiliations

Gunawan Witjaksono: BRI Institute, Jl. Harsono RM No. 2, Ragunan, Jakarta 12550, Passsar Minggu, Indonesia
Muhammad Junaid: Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
Mohd Haris Khir: Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
Zaka Ullah: Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
Nelson Tansu: School of Electrical and Electronic Engineering, The University of Adelaide, Adelaide, SA 5005, Australia
Mohamed Shuaib Bin Mohamed Saheed: Department of Mechanical Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
Muhammad Aadil Siddiqui: Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
Saeed S. Ba-Hashwan: Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
Abdullah Saleh Algamili: Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
Saeed Ahmed Magsi: Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
Muhammad Zubair Aslam: Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
Rab Nawaz: Department of Fundamental Science, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia

DOI: https://doi.org/10.3390/molecules26216424
Journal volume & issue: Vol. 26, no. 21
p. 6424

Abstract

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Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.

Published in Molecules

ISSN: 1420-3049 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Organic chemistry
Website: http://www.mdpi.com/journal/molecules

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