Optical conductivity of a Bi2Se3 topological insulator with a THz transparent top gate

Abstract

We have performed an investigation into the optical conductivity and magnetotransport properties of top-gated devices patterned on the topological insulator Bi2Se3 in order to determine the relative effects of the different carrier species that exist within these novel materials. We find that the topologically protected surfaces within our samples are partially screened from the action of the gate by trivial band-bending states formed at the top surface of the topological insulator. Despite this, the mobility of the topological surface carriers is significantly affected by the application of an external gate bias. Additionally, we find that the optical conductivity response is dominated by the topologically protected surface states, and that the optical conductivity is particularly sensitive to the scattering caused by the topological surfaces coupling to trivial states, arising from the bulk or band-bending induced surface states. These results will have interesting applications to the design of future plasmonic devices that incorporate topological materials.

Keywords

• topological insulators
• thz time domain spectroscopy
• quantum transport