Metals (Apr 2024)

Evaluation of Shear-Punched Surface Layer Damage in Three Types of High-Strength TRIP-Aided Steel

  • Koh-ichi Sugimoto,
  • Shoya Shioiri,
  • Junya Kobayashi

DOI
https://doi.org/10.3390/met14050531
Journal volume & issue
Vol. 14, no. 5
p. 531

Abstract

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The damage properties in the shear-punched surface layer, such as the strain-hardening increment, strain-induced martensite fraction, and initiated micro-crack/void characteristics at the shear and break sections, were experimentally evaluated to relate to the stretch-flangeability in three types of low-carbon high-strength TRIP-aided steel with different matrix structures. In addition, the surface layer damage properties were related to the mean normal stress developed on shear-punching and microstructural properties. The shear-punched surface damage of these steels was experimentally confirmed to be produced under the mean normal stress of negative to 0 MPa. TRIP-aided bainitic ferrite (TBF) steel had the smallest surface layer damage, featuring a significantly suppressed micro-crack/void initiation. This was due to the fine bainitic ferrite lath matrix structure, a low strength ratio of the second phase to the matrix structure, and the high mechanical stability of the retained austenite. On the other hand, the surface layer damage of TRIP-aided annealed martensite (TAM) steel was suppressed next to TBF steel and was smaller than that of TRIP-aided polygonal ferrite (TPF) steel. The surface layer damage was also characterized by a large plastic strain, a large amount of strain-induced martensite transformation, and a relatively suppressed micro-crack/void formation, which resulted from an annealed martensite matrix and a large quantity of retained austenite. The excellent stretch-flangeability of TBF steel might be caused by the suppressed micro-crack/void formation and high crack propagation/void connection resistance. The next high stretch-flangeability of TAM steel was associated with a small-sized micro-crack/void initiation and high crack growth/void connection resistance.

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