RNA–CTMA Dielectrics in Organic Field Effect Transistor Memory

Abstract

In recent years, biopolymers are highly desired for their application in optic electronic devices, because of their unique structure and fantastic characteristics. In this work, a non-volatile memory (NVM) device based on the bio thin-film transistor (TFT) was fabricated through applying a new RNA–CTMA (cetyltrimethylammonium) complex as a gate dielectric. The physicochemical performance, including UV, CD spectral, thermal stability, surface roughness, and microstructure, has been investigated systematically. The RNA–CTMA complex film exhibits strong absorption with a well-defined absorption peak around 260 nm, the RMS roughness is ~2.1 nm, and displayed excellent thermal stability, up to 240 °C. In addition, the RNA–CTMA complex-based memory device shows good electric performance, with a large memory window up to 52 V. This demonstrates that the RNA–CTMA complex is a promising candidate for low cost, low-temperature processes, and as an environmentally friendly electronic device.

Keywords

• RNA-CTMA
• OTFT
• transistor memory